Insulated Gate Bipolar Transistor (Igbt) Tender, Tamil Nadu - 86869035

Procurement Summary

State : Tamil Nadu

Summary : Insulated Gate Bipolar Transistor (Igbt)

Deadline : 14 Aug 2023

Other Information

Notice Type : Tender

TOT Ref.No.: 86869035

Document Ref. No. : 78236310

Financier : Self Financed

Purchaser Ownership : Public

Document Fees : Refer Document

Tender Value : Refer Document

EMD : Refer Document

Purchaser's Detail

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Tender Details

Insulated Gate Bipolar Transistor (IGBT) capable to carry 75 Amps DC collector current at max. rated temperature and 1200V Collector-Emitter Voltage, consisting of 2 IGBTs (Dual IGBT switches in half bridge configuration) in a single module of size 94mm x 34mm x 30mm casing Infineon make BSM75GB120DN2 or SEMIKRON make model No. SKM75GB12F4 or LITTLEFUSE make model No. MG1775S-BN4MM or its equivalent model of MITSHUBISHI or TOSHIBA makes.
Contract Type : Goods
Tender Type : Limited - Indigenous
Contract Category : Expenditure
Evaluation Criteria : Itemwise/Consigneewise
Bidding System : Single Packet
Pre-Bid Conference Required : No
Pre-Bid Conference Date Time : Not Applicable
Tendering Section : 78
Inspection Agency : CONSIGNEE
Publishing Date / Time : 07/08/2023 12:44 Bidding to be Done on IREPS
Procure From Approved Sources : No
Approving Agency : Not Applicable
Closing Date Time : 14/08/2023 10:30
Validity of Offer ( Days) : 60
Ranking Order for Bids : Lowest to Highest
Advertised Value :
Tender Doc. Cost (INR) : 0.00
Earnest Money (INR) : 0.00

Consignee SSE/EW/PER, SR Tamil Nadu 25.00 Numbers

Documents

 Tender Notice

viewNitPdf_4300840.pdf