Silicon Wafers with Multiple Thin Films - Sources Sought Notice Tender, USA - 113528238

Procurement Summary

Country : USA

Summary : Silicon Wafers with Multiple Thin Films - Sources Sought Notice

Deadline : 04 Feb 2025

Other Information

Notice Type : Tender

TOT Ref.No.: 113528238

Document Ref. No. : NIST-SS25-CHIPS-0049

Competition : ICB

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

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Tender Details

Description

The purpose of this sources sought notice is to conduct market research and identify potential sources of commercial products/services that satisfy the Government-s anticipated needs.

BACKGROUND

The National Institute of Standards and Technology (NIST), particularly the Biomedical Measurement Technologies group, is actively seeking specialized test substrates composed of silicon wafers enhanced with multiple thin films. These substrates will play a crucial role in testing biofunctionalization techniques that are essential for advanced electronic sensing applications.

This project aims to rigorously assess the stability and reliability of biomolecule attachment to semiconductor surfaces, which is vital for the development of effective biosensors. The substrates required will serve as an industry reference point for NIST's internal samples. As such, they must be manufactured on high-quality foundry or research-grade semiconductor fabrication lines capable of processing 200 mm silicon wafers. The thin films must be applied either uniformly as a continuous layer over the entire wafer surface or in a precise patterned layout using either optical or e-beam lithography, depending on the specific requirements outlined below:

Blanket films of 3 nm Hafnium Oxide (HfO2) on 2 nm Silicon Dioxide (SiO2) on Silicon wafers. Films with a pre-specified lithographic pattern of 3 nm HfO2 on 2 nm SiO2 on Silicon wafers. Blanket 2 nm SiO2 on Silicon wafers. Blanket Gold (Au) films with thickness 20 nm on Silicon wafers. Blanket films of amine terminated self-assembled monolayers (SAMs) on a film of 3 nm HfO2 on 2 nm SiO2 on Silicon wafers. Fin structures, 30 nm wide, 30 nm high, and 5 μm, long patterned with e-beam lithography on silicon wafers. The fin patterns will be coated with 3 nm HfO2.NIST is seeking information from sources that may be capable of providing a solution that will achieve the objectives and essential requirements described above.br...
Active Contract Opportunity
Notice ID : NIST-SS25-CHIPS-0049
Related Notice
Department/Ind. Agency : COMMERCE, DEPARTMENT OF
Sub-tier : NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
Office: DEPT OF COMMERCE NIST
General Information
Contract Opportunity Type: Sources Sought (Original)
Original Published Date: Jan 21, 2025 04:00 pm EST
Original Response Date: Feb 04, 2025 04:00 pm EST
Inactive Policy: 15 days after response date
Original Inactive Date: Feb 19, 2025
Initiative: None

Classification
Original Set Aside:
Product Service Code: 6640 - LABORATORY EQUIPMENT AND SUPPLIES
NAICS Code: 334516 - Analytical Laboratory Instrument Manufacturing

Place of Performance: Gaithersburg, MD 20899 USA

Documents

 Tender Notice