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Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with... Tender

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ENERGY, DEPARTMENT OF has floated a tender for Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Improvements. The project location is USA and the tender is closing on 19 Apr 2024. The tender notice number is IL-13772Plus, while the TOT Ref Number is 99092749. Bidders can have further information about the Tender and can request the complete Tender document by Registering on the site.

Procurement Summary

Country : USA

Summary : Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Improvements

Deadline : 19 Apr 2024

Other Information

Notice Type : Tender

TOT Ref.No.: 99092749

Document Ref. No. : IL-13772Plus

Competition : ICB

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

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Tender Details

Description

Opportunity:

Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its high voltage and high power junction-gate field-effect transistors (JFETs) with improvements.

Background:

Although silicon still constitutes 95% of the device types available in the market, heat management continues to challenge its use in power electronics. Diamond, an ultrawide bandgap (UWBG) material, can run hotter than silicon without a degradation in performance, can more easily be cooled, can tolerate higher voltages before failure, and electrons can move faster through the material. Because of these characteristics, diamond is superior to other UWBG materials like SiC, GaN, GaO, and AlN. Diamond-based semiconductors are capable of increasing power density as well as creating faster lighter, and simpler devices.

Description:

LLNL-s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities. In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source. The initial exposure to light can set up the desired conduction current, after which the light source could be turned off. Even with the light turned off, the device can still maintain the desired current condition, and the electric current remains conducting. The device is a planar design, but it can be improved upon by adding Fin and OGAA structures. Additionally, an optical junction termination extension (O-JTE) used to suppress the high electric field that appears at the vicinity of the corners between gate and p-channel.

Advantages/Benefits:

Value Proposition: Less operating costs relative to other photocond...
Active Contract Opportunity Notice ID IL-13772Plus Related Notice Department/Ind. Agency ENERGY, DEPARTMENT OF Sub-tier ENERGY, DEPARTMENT OF Office LLNS – DOE CONTRACTOR
General Information
Contract Opportunity Type: Special Notice (Original)
All Dates/Times are: (UTC-07:00) PACIFIC STANDARD TIME, LOS ANGELES, USA
Original Published Date: Mar 19, 2024 02:31 pm PDT
Original Response Date: Apr 19, 2024 03:00 pm PDT
Inactive Policy: 15 days after response date
Original Inactive Date: May 04, 2024
Initiative:
Classification
Original Set Aside:
Product Service Code:
NAICS Code: 334419 - Other Electronic Component Manufacturing

Place of Performance: Livermore, CA USA