Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with... Tender

ENERGY, DEPARTMENT OF has floated a tender for Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate. The project location is USA and the tender is closing on 30 Nov 2023. The tender notice number is IL-13772, while the TOT Ref Number is 91436138. Bidders can have further information about the Tender and can request the complete Tender document by Registering on the site.

Expired Tender

Procurement Summary

Country : USA

Summary : Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate

Deadline : 30 Nov 2023

Other Information

Notice Type : Tender

TOT Ref.No.: 91436138

Document Ref. No. : IL-13772

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

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Tender Details

Description

Opportunity:

Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its high voltage and high power junction-gate field-effect transistors (JFETs) using photo-controlled gates.



Background:

Although silicon still constitutes 95% of the device types available in the market, heat management continues to challenge its use in power electronics. Diamond, an ultrawide bandgap (UWBG) material, can run hotter than silicon without a degradation in performance, can more easily be cooled, can tolerate higher voltages before failure, and electrons can move faster through the material. Because of these characteristics, diamond is superior to other UWBG materials like SiC, GaN, GaO, and AlN. Diamond-based semiconductors are capable of increasing power density as well as creating faster lighter, and simpler devices.



Description:

LLNL-s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities. In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source. The initial exposure to light can set up the desired conduction current, after which the light source could be turned off. Even with the light turned off, the device can still maintain the desired current condition, and the electric current remains conducting.



Advantages/Benefits:

Value Proposition: Less operating costs relative to other photoconductive switches. The switch is non-volatile, meaning it retains its status for a long time without the need of sustaining electric or optical power.

Potential Applications:

Power Electronics Applications needing high voltage switches

Development Sta...
Active Contract Opportunity Notice ID IL-13772 Related Notice Department/Ind. Agency ENERGY, DEPARTMENT OF Sub-tier ENERGY, DEPARTMENT OF Office LLNS – DOE CONTRACTOR
General Information
Contract Opportunity Type: Special Notice (Original)
All Dates/Times are: (UTC-07:00) PACIFIC STANDARD TIME, LOS ANGELES, USA
Original Published Date: Oct 31, 2023 11:06 am PDT
Original Response Date: Nov 30, 2023 12:00 pm PST
Inactive Policy: 15 days after response date
Original Inactive Date: Dec 15, 2023
Initiative:
Classification
Original Set Aside:
Product Service Code:
NAICS Code: 334419 - Other Electronic Component Manufacturing

Place of Performance: Livermore, CA USA

Documents

 Tender Notice


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